Generation and detection of Terahertz radiation by field effect transistors

Helicity sensitive terahertz radiation detection by field effect transistors

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Strained-Si modulation doped field effect transistors as detectors of terahertz and sub-terahertz radiation

Strained-Si modulation doped field effect transistors have been studied as detectors of 0.2 THz and 1.6 THz electromagnetic radiation at room temperature. The difference in the gate voltage dependences for 0.2 THz and 1.6 THz radiation and spatial pattern of the transistor response to focused 1.6 THz radiation confirms that the mechanism of detection is linked to the excitations of the two-dime...

Terahertz Emission and Detection by Plasma Waves in Nanometer Size Field Effect Transistors

Plasma oscillations in nanometer field effect transistors are used for detection and generation of electromagnetic radiation of THz frequency. Following first observations of resonant detection in 150 nm gate length GaAs HEMT, we describe recent observations of room temperature detection in nanometer Si MOSFETs, resonant detection in GaN/AlGaN HEMTs and improvement of room temperature detection...

Terahertz Detection of Quantum Cascade Laser Emission by Plasma Waves in Field Effect Transistors

Terahertz Detection of Quantum Cascade Laser Emission by Plasma Waves in Field Effect Transistors F. Teppea,∗, C. Consejo, J. Torres, B. Chenaud, P. Solignac, S. Fathololoumi, Z.R. Wasilewski, M. Zholudev, N. Dyakonova, D. Coquillat, A. El Fatimy, P. Buzatu, C. Chaubet and W. Knap L2C, UMR N◦ 5221 CNRS, Université Montpellier 2, GIS-TERALAB, 34095 Montpellier, France IES, UMR N◦ 5214 CNRS, Univ...

Detection of Terahertz Radiation from Submicron Plasma Waves Transistors